The challenges in guided self-assembly of Ge and InAs quantum dots on Si
نویسندگان
چکیده
The topic of guided self-assembly of Ge and InAs quantum dots on Si (001) substrates via epitaxy is discussed. A buried misfit dislocation network can be used to guide the assembly process through the associated strain field. Patterned substrates can also be used to guide the assembly process. This paper discusses the recent experimental and theoretical studies of the guided assembly process with an emphasis on what remains to be understood. D 2005 Elsevier B.V. All rights reserved.
منابع مشابه
Abstract for an Invited Paper for the MAR05 Meeting of The American Physical Society Unified description of the formation and evolution of self-organized quantum dots in the InAs/GaAs(001) and Ge/Si(001) systems
for an Invited Paper for the MAR05 Meeting of The American Physical Society Unified description of the formation and evolution of self-organized quantum dots in the InAs/GaAs(001) and Ge/Si(001) systems GIOVANNI COSTANTINI, Max-Planck-Institut fuer Festkoerperforschung Self-organised semiconductor quantum dots, epitaxially grown on lattice-mismatched substrates, are promising candidates for the...
متن کاملWavelength and polarization variations of InAs/GaAs quantum dots emission at liquid Helium temperature via microphotoluminescence spectroscopy
In this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled InAs/GaAs quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. The microcavity wafer sample is grown by molecular beam epitaxy (MBE) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...
متن کاملWavelength and polarization variations of InAs/GaAs quantum dots emission at liquid Helium temperature via microphotoluminescence spectroscopy
In this paper, we investigate variation of the wavelength, intensity and polarization of the self-assembled InAs/GaAs quantum dots emission by microphotoluminescence spectroscopy at the liquid helium temperature. The microcavity wafer sample is grown by molecular beam epitaxy (MBE) and chemically etched into the micropillar structure (with elliptical cross section - long and short axis 2µm×1.5µ...
متن کاملQuantum Dot (QD) gate Si-FETs with Self-Assembled GeOX Cladded Germanium Quantum Dots
This paper presents preliminary data on the transfer and output characteristics of a GeOXcladded Ge quantum dot (QD) gate Si MOSFET. The MOSFET is formed by depositing cladded QDs above the SiO2 gate insulator formed on pSi region, sandwiched between n-type source and drain. Ge (~ 2 to 8 nm) nanoparticles, cladded with GeOX (~1nm) layers, are deposited using site-specific self-assembly. In addi...
متن کاملTensile strained III-V self-assembled nanostructures on a (110) surface
The vast majority of research on epitaxial quantum dots use compressive strain as the driving force for self-assembly on the (001) surface, with InAs/GaAs(001) and Ge/Si(001) being the best-known examples. In this talk, I will discuss our work on determining the feasibility of growing coherent, tensile-strained III-V nanostructures on a (110) surface. GaP on GaAs(110) was chosen as an initial t...
متن کامل